Part Number Hot Search : 
MTCO3 MM3Z30 ZA2BG4 2SC4908 76PSB03 P6SMB13 1N5227D MJE29
Product Description
Full Text Search

STP18NM60N - N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

STP18NM60N_6600463.PDF Datasheet


 Full text search : N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
 Product Description search : N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247


 Related Part Number
PART Description Maker
STU6N60M2 STF6N60M2 STP6N60M2 N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
ST Microelectronics
STP9N60M2 STD9N60M2    Extremely low gate charge
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
STMicroelectronics
ST Microelectronics
STB36NM60N STB36NM60ND STW36NM60ND Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II
STMicroelectronics
STB10N60M2 STU10N60M2 STP10N60M2 STD10N60M2 N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D2PAK
STMicroelectronics
S5573 MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
Hamamatsu Photonics
STF24N60M2 STFI24N60M2 N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages
STMicroelectronics
STF33N60M2 STW33N60M2 STI33N60M2 STP33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
IRG4PC50U IRG4PC50U-E 55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.65V的,@和VGE \u003d 15V的,集成电路\u003d 27A条)
IRF[International Rectifier]
International Rectifier, Corp.
S6968-01 MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
Hamamatsu Photonics
STL24N60DM2    N-channel 600 V, 0.195 (ohm) typ., 15 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
STMicroelectronics
 
 Related keyword From Full Text Search System
STP18NM60N semiconductor STP18NM60N philips STP18NM60N hlmp STP18NM60N bit STP18NM60N DATASHEET PDF
STP18NM60N siemens STP18NM60N electronics STP18NM60N filetype:pdf STP18NM60N band STP18NM60N suply voltase IC
 

 

Price & Availability of STP18NM60N

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.28461289405823