PART |
Description |
Maker |
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 512K x 36,Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
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Micron Technology, Inc.
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AS7C25512NTF32_36A AS7C25512NTF36A-10TQC AS7C25512 |
2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 8.5 ns, PQFP100 2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 7.5 ns, PQFP100 2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD 512K X 32 ZBT SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 51Vz 5mA-Izt 0.05 5uA-Ir 38.8Vr DO41-GLASS 5K/AMMO DIODE, ZENER, 24V, 5%, 1W& DIODE ZENER SINGLE 1000mW 33Vz 7.5mA-Izt 0.05 5uA-Ir 25.1Vr DO41-GLASS 5K/REEL NTD? Sync SRAM - 2.5V
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Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
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IDT71T75602 IDT71T75802S100PFI8 IDT71T75802S100PF8 |
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM *NEW* 2.5V 512K X 36 ZBT Synchronous 2.5V I/O Pipeline SRAM 512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
|
IDT
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GS8322Z72C-225T GS8322Z72GC-225T GS8322Z18B-225IT |
512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209 512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209 2M X 18 ZBT SRAM, 7 ns, PBGA119
|
GSI Technology, Inc.
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GVT71512ZC18-5I GVT71512ZC18-6I CY7C1356A-133ACI C |
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.6 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 5 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 512K X 18 ZBT SRAM, 3.2 ns, PQFP100 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 5 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY7C1356BV25-225 CY7C1354BV25-166 CY7C1354BV25-225 |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119 256K x 36/512K x 18 Pipelined SRAM with NoBLArchitecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟 256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture
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Cypress Semiconductor Corp. Crystek, Corp.
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CY7C1372D-250BGXC CY7C1372D-250BGXI CY7C1372D-250B |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
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Cypress Semiconductor, Corp.
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IS61NVP25636A-200TQI IS61NLP25636A-200B2I IS61NLP2 |
256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 3.1 ns, PQFP100 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 3.1 ns, PBGA119 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 2.6 ns, PQFP100 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 256K X 36 ZBT SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 3.1 ns, PBGA165 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 2.6 ns, PBGA165 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 2.6 ns, PBGA119 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 3.1 ns, PBGA119 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 2.6 ns, PQFP100 256K x 36 and 512K x 18 9Mb, PIPELINE (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 3.1 ns, PQFP100 256K X 36 ZBT SRAM, 3.1 ns, PBGA165
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Integrated Silicon Solution, Inc. INTEGRATED SILICON SOLUTION INC
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CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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