| PART |
Description |
Maker |
| K7N321845M-QC25 K7N321845M-QC20 K7N321801M-QC20 K7 |
1Mx36 & 2Mx18-Bit Pipelined NtRAM
1Mx36 & 2Mx18 Flow-Through NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7N323601M-QC20 K7N323601M DSK7N323601M K7N323645M |
1Mx36 & 2Mx18 Flow-Through NtRAM
1Mx36 & 2Mx18-Bit Pipelined NtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7N323645MK7N321845M |
1Mx36 & 2Mx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7P323666M K7P321866M |
1Mx36 & 2Mx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS61QDPB21M36A1 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
|
| K7S3236U4C |
1Mx36 & 2Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
| IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| IS61DDP2B41M36A/A1/A2 IS61DDP2B42M18A IS61DDP2B42M |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
| K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM
1M X 36 ZBT SRAM, 3.5 ns, PQFP100
1M X 36 ZBT SRAM, 3.5 ns, PBGA165
1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
