| PART |
Description |
Maker |
| KBE00S009M-D411 KBE00S009M-D4110 |
1Gb NAND x 2 256Mb Mobile SDRAM x 2
SPECIALTY MEMORY CIRCUIT, PBGA137
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| KBE00G003M-D411 KBE00G003M |
NAND 512Mb*2 Mobile SDRAM 256Mb*2
|
SAMSUNG[Samsung semiconductor]
|
| KBE00F005A-D411 |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W988D6FB |
(W988D2FB / W988D6FB) 256Mb Mobile LPSDR
|
Winbond
|
| K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
| EDL5132CBMA-10-E EDL5132CBMA |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| W3EG264M72AFSR335D3XG |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相环，FBGA封装
|
KEMET Corporation
|
| K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 |
TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
