PART |
Description |
Maker |
NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
BFP620FE6327 |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG
|
NESG3032M14-A |
S BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
|
|
BFP620FE7764 |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
UPA800T UPA800T-T1 UPA800T-KB |
2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
|
NEC[NEC]
|
NESG220033 NESG220033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
NESG240034 NESG240034-A NESG240034-T1 NESG240034-T |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
NEC
|
MRF3866R1R2 MSC1312 MRF3866 MRF3866R1 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS From old datasheet system RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP MICROSEMI[Microsemi Corporation] Microsemi, Corp.
|
BFG196E6327 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG SIEMENS A G
|
X3A-BFR505 |
X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
NXP SEMICONDUCTORS
|
MMBR901LT3 |
S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
FREESCALE SEMICONDUCTOR INC
|
BFP540 |
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
INFINEON TECHNOLOGIES AG
|