PART |
Description |
Maker |
PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
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IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S |
26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 2MM TERMINAL STRIPS HiPerFET Power MOSFETs 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
IXYS[IXYS Corporation] IXYS, Corp.
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STW45NM50FD09 STW45NM50FD |
45 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET (with fast diode) N-channel 500 V, 0.07 楼?, 45 A, TO-247 FDmesh垄芒 Power MOSFET (with fast diode)
|
STMicroelectronics
|
STW29NK50ZD W29NK50ZD |
N-CHANNEL 500V - 0.11 OHM - 29A TO-247 FAST DIODE SUPERMESH MOSFET N-CHANNEL 500 V - 0.11蟹 - 29A TO-247 Fast Diode SuperMESH??MOSFET N-CHANNEL 500 V - 0.11з - 29A TO-247 Fast Diode SuperMESH⑩ MOSFET N-CHANNEL 500 V - 0.11?/a> - 29A TO-247 Fast Diode SuperMESH?/a> MOSFET N-CHANNEL 500 V - 0.11 - 29A TO-247 Fast Diode SuperMESH MOSFET
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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STB11NK50ZT4 STB11NK50Z08 STP11NK50ZFP STP11NK50Z |
10 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel 500 V, 0.48 ヘ , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET
|
STMicroelectronics
|
STP13NK50Z STF13NK50Z STW13NK50Z |
N-channel 500 V, 0.4 Ohm, 11 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET N-channel 500 V, 0.40 惟, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET
|
ST Microelectronics STMicroelectronics
|
APT30F50B |
N-Channel FREDFET 30 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
|
Microsemi, Corp.
|
IXTN36N50 |
N-Channel Enhancement Mode 36 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp. IXYS Corporation
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
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STW19NM50N STF19NM50N STP19NM50N |
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-247 N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP
|
ST Microelectronics
|
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