PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
FZ1200R33KF2C FZ1200R33KF2C-B5 |
IGBT Power Module IGBT-Wechselrichter / IGBT-inverter
|
eupec GmbH
|
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
GP200MKS12 |
IGBT Chopper Module Preliminary Information 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. DYNEX[Dynex Semiconductor]
|
CPV362MK |
IGBT SIP MODULE Short Circuit Rated UltraFast IGBT
|
IRF[International Rectifier]
|
DIM800DDM17-A000 |
Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd. Dynex Semiconductor Ltd.
|
DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
APTGT20H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 32 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
APTGT30H170T3G |
Full - Bridge Trench Field Stop IGBT Power Module 45 A, 1700 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|