| PART |
Description |
Maker |
| NRC50J100TR |
RES,TF,SMD,2010,10 OHM,1/2W,5% SEI RMC 1/2 10 5%;KOA RM73B2HTE100J RESISTOR, METAL GLAZE/THICK FILM, 0.75 W, 5 %, 250 ppm, 10 ohm, SURFACE MOUNT, 2010
|
NIC Components, Corp.
|
| MZ131 1N484 1N5100 1N5096 1N4096 1N5106 MZ731 MZ73 |
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 8.2 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 9.1 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Zener Voltage Regulator Diode
POWER ZENERS
From old datasheet system
Resistor Wirewound 25.5 OHM 5% 0.75W 20PPM AXIAL Thru-Hole T/R
Resistor Wirewound 20.5 OHM 5% 0.75W 20PPM AXIAL Thru-Hole T/R
Resistor Wirewound 34.8 OHM 5% 0.75W 20PPM AXIAL Thru-Hole T/R
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 62 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3 WATT GLASS ZENER DIODES
|
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| SFS9624 |
2.4 A, 250 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
|
| SIHFI634G |
5.6 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
VISHAY SILICONIX
|
| RFP-250-200RM RFP-250-100RM-S |
Flanged Resistors 250 Watts, 200 ohm
|
Anaren Microwave
|
| RFP6N50 RFM6N45 RFP6N45 |
6A/ 450V and 500V/ 1.250 Ohm/ N-Channel Power MOSFETs
6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| MTW32N25E MTW32N25 |
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| SUP40N25-60-E3 |
40 A, 250 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB LEAD FREE PACKAGE-3
|
Vishay Intertechnology, Inc.
|
| 2SK2531 |
General-Purpose Switching Device Applications
6 A, 250 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Sanyo Semicon Device
|
| CR0805G17M4F CR0805G17M4G CR0805G17M4J CR0805G17M8 |
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 1 %, 250 ppm, 17400000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 250 ppm, 17400000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 5 %, 250 ppm, 17400000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 1 %, 250 ppm, 17800000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 2 %, 250 ppm, 17800000 ohm, SURFACE MOUNT, 0805 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 0.125 W, 5 %, 250 ppm, 17800000 ohm, SURFACE MOUNT, 0805 CHIP
|
Welwyn Components, Ltd.
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
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