| PART |
Description |
Maker |
| 2MBI400N-060-01A |
400 A, 600 V, N-CHANNEL IGBT
|
FUJI ELECTRIC CO LTD
|
| 2MBI400NT- 2MBI400NT-060-02 2MBI400NT-060-0201 |
IGBT module
400 A, 600 V, N-CHANNEL IGBT
|
Vishay Intertechnology, Inc.
FUJI[Fuji Electric]
|
| STGW30NC60KD |
60 A, 600 V, N-CHANNEL IGBT, TO-247
30 A - 600 V - short circuit rugged IGBT
|
STMicroelectronics
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
| STGW30NC60W STGB30NC60WT4 |
60 A, 600 V, N-CHANNEL IGBT, TO-247AC
30 A - 600 V - ultra fast IGBT
|
STMicroelectronics
|
| IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJH60C9DPD-00-J2 RJH60C9DPD |
10 A, 600 V, N-CHANNEL IGBT SC-63, DPAK-3
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH60D2DPE-00-J3 RJH60D2DPE |
20 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3
Silicon N Channel IGBT Application: Inverter
|
NXP Semiconductors N.V.
Renesas Electronics Corporation
|
