| PART |
Description |
Maker |
| APT801R2BN APT751R2BN |
(APT801RxBN / APT751RxBN) Power MoS IV
|
Advanced Power Technology
|
| GM195 |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| GM194 |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
| LED1200-35M32 |
Stem type LED with high output powe
|
List of Unclassifed Manufacturers
|
| GL194A |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| PE2235-30 |
HIGH POWE R DIRECTIONAL COUPLER FREQUENCY RANGE: 4-12 GHz
|
Pasternack Enterprises, Inc.
|
| STA9K9.1P STA9K7.5P STA9K8.2P |
9000 WATTS PEAK PULSE POWE 7.5-100 VOLTS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
|
Solid States Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| STA9KXXXP |
(STA9K7.5P - STA9K100P) 9000 WATTS PEAK PULSE POWE 7.5-100 VOLTS UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
|
Solid States Devices
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
