| PART |
Description |
Maker |
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BSS92-18 |
150 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
|
VISHAY SILICONIX
|
| APT2X31D20J_05 APT2X30D20J APT2X31D20J APT2X31D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| LTI202FD |
200 V doubler 10-12.5 A forward current, 150 ns recovery time
|
Voltage Multipliers
|
| ZXMP2120G4 ZXMP2120G4TA ZXMP2120G4TC |
200V P-CHANNEL ENHANCEMENT MODE MOSFET 200 mA, 200 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
Diodes Incorporated
Zetex Semiconductor PLC
|
| R720366XXWA R5010210XXWA R9G00822XXWA R9G00622XXWA |
600 A, 3600 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
2200 A, 800 V, SILICON, RECTIFIER DIODE
2200 A, 600 V, SILICON, RECTIFIER DIODE
2200 A, 400 V, SILICON, RECTIFIER DIODE
450 A, 150 V, SILICON, RECTIFIER DIODE
550 A, 50 V, SILICON, RECTIFIER DIODE
550 A, 150 V, SILICON, RECTIFIER DIODE
2500 A, 1300 V, SILICON, RECTIFIER DIODE
300 A, 900 V, SILICON, RECTIFIER DIODE
1800 A, 200 V, SILICON, RECTIFIER DIODE
1200 A, 3100 V, SILICON, RECTIFIER DIODE
2000 A, 2300 V, SILICON, RECTIFIER DIODE
3600 A, 2300 V, SILICON, RECTIFIER DIODE
100 A, 150 V, SILICON, RECTIFIER DIODE
|
POWEREX INC
|
| 3402FA |
200 V three phase bridge 18-20 A forward current, 150 ns recovery time
|
Voltage Multipliers
|
| 150KSR200M 152KR300AMPBF |
150 A, 200 V, SILICON, RECTIFIER DIODE
150 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
|
|
| IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET
50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
Molex, Inc.
VISHAY INTERTECHNOLOGY INC
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts 150 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| SUM09MN20-270 SUM09N20-270 |
N-Channel 200-V (D-S) 175C MOSFET
N-Channel 200-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
|
