| PART |
Description |
Maker |
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IS61NLF102436A IS61NLF102436A-6.5B3 IS61NLF102436A |
STATE BUS SRAM
1M X 36 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
1M X 36 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100
2M X 18 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
2M X 18 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100
|
Integrated Silicon Solution, Inc.
|
| IDT71V547S90PFI |
128K X 36, 3.3V Synchronous SRAM with ZBT Feature, Burst Counter and Flow-Through Outputs 128K X 36 ZBT SRAM, 9 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| IDT71T75602 IDT71T75802S100PFI8 IDT71T75802S100PF8 |
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
*NEW* 2.5V 512K X 36 ZBT Synchronous 2.5V I/O Pipeline SRAM
512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
|
IDT
|
| MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128 |
3.3V I/O28K x 32，Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器)
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
3.3V I/O28K x 36，Flow-Through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36，流量通过ZBT SRAM的电压（3.3V或输输出Mb的流通式同步静态存储器
2.5V I/O28K x 32，Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32，流量通过ZBT SRAM的电压（2.5V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| CY7C1370D-250BZI CY7C1372D-167BGC CY7C1372D-167BZC |
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 3.4 ns, PQFP100
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA165
18-Mbit (512K X 36/1M X 18) Pipelined SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 2.6 ns, PBGA119
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS7C33512NTD32_36A AS7C33512NTD32-36A.V2.8 AS7C335 |
3.3V 512K x 32/36 Pipelined SRAM with NTD 3.3流水线为512k × 32/36与新台币的SRAM
3.3V 512K x 32/36 Pipelined SRAM with NTD 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
3.3V 512K x 32/36 Pipelined SRAM with NTD 512K X 32 ZBT SRAM, 3.8 ns, PQFP100
From old datasheet system
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
|
| MT55L256V18F1 MT55L256L18F1 |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
|
Micron Technology, Inc.
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
