| PART |
Description |
Maker |
| ML920AA11S |
(ML9xx11) InGaAsP DFB LASER DIODES
|
Mitsubishi Electric
|
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| ML725J16F ML7XX1602 ML725B16F ML720J16S |
MITSUBISHI LASER DIODES 2.5Gbps InGaAsP DFB LASER DIODE
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML9SM41 |
InGaAsP DFB-LASER DIODE WITH EA MODULATOR
|
Mitsubishi Electric Semicon...
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH NX6514EH-AZ |
1 550 nm InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| ML9XX40 ML920J40S ML920J40S-01 ML920J40S-04 ML920J |
2.5Gbps InGaAsP DFB LASER DIODE 2.5Gbps的InGaAsP的DFB激光器二极
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML9XX17 ML9XX17SERIES |
InGaAsP MQW-DFB LASER DIODE WITH EA MODULATOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML7924 ML7XX4 |
From old datasheet system
InGaAsP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Semiconductor
|
| NX63067H NX63067K NX6307GH NX6307GK NX6307 |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| ML9XX1104 ML925B11F |
Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semicon...
|
