| PART |
Description |
Maker |
| SD1208-50-5 |
CAP AND SAFETY CHANN, BNC
|
Winchester Electronics Corporation
|
| S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| RFD4N06LSM RFD4N06L FN2837 |
4A/ 60V/ 0.600 Ohm/ Logic Level/ N-Channel Power MOSFETs
4A 60V 0.600 Ohm Logic Level N-Channel Power MOSFETs
4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
|
| STW21NM60ND STB21NM60ND09 STP21NM60ND STI21NM60ND |
N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
17 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Low input capacitance and gate charge
|
STMicroelectronics
|
| APT30M60J |
31 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI POWER PRODUCTS GROUP
|
| PHX4N60 |
3.6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP SEMICONDUCTORS
|
| FQB12N60CTM |
12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FQU5N60C FQU5N60CTU FQD5N60C FQD5N60CTM |
N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ohm
|
Fairchild Semiconductor
|
| FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 |
From old datasheet system
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| 2SK1118 |
6 A, 600 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220IS
|
|
|
