| PART |
Description |
Maker |
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| ZMV831ATA ZMV831BTA ZV831 ZV831BV2TA ZMV832ATA ZMV |
SILICON 28V HYPERABRUPT VARACTOR DIODES
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8VHYPERABRUPT变容二极
25 Volt hyperabrupt varactor diode
SHELL, DSUB, 25, 90, BLK, POY, S (1011898)
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES 8.2 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
SILICON 28V HYPERABRUPT VARACTOR DIODES UHF BAND, 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
BACKSHL, D-SUB, 9POS, MTL, NIPL, (914794) 22 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
28 V, silicon hyperabrupt varactor diode
SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| ZC831 ZC831A ZC831B ZC830 ZC830A ZC830B ZC836B ZC8 |
SOT23 SILICON VARIABLE CAPACITANCE DIODES
25 Volt hyperabrupt varactor diode
MS (MIL-C-5015)/97 SERIES 3108A SOLID SHELL ANGLE PLUGS, RIGHT ANGLE BODY STYLE, SOLDER TERMINATION, 22 SHELL SIZE, 22-2 INSERT ARRANGEMENT, PLUG GENDER, 3 CONTACTS 47 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
10 pF, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
DIODES INC
|
| SLOTTEN-4-17 SLOTTEN-2-17 SLOTTEN-3-17 SLOTTEN-5-1 |
SHIELDED, 288 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 286 uH - 630 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 230 uH - 310 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 72 uH - 163 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 303 uH - 765 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 66 uH - 136 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 67.2 uH - 100.2 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 52.7 uH - 71.3 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 67.2 uH - 100.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 280 uH - 432 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.76 uH - 2.64 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.2 uH - 1.8 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 2.4 uH - 5.4 uH, VARIABLE INDUCTOR DIP-5
UNSHIELDED, 1.25 uH - 2.75 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 2.9 uH - 3.9 uH, VARIABLE INDUCTOR DIP-5
SHIELDED, 18.7 uH - 25.3 uH, VARIABLE INDUCTOR DIP-5
|
Coilcraft, Inc.
|
| HVB350BYP |
Silicon Epitaxial Planar Variable Capacitance Diode for VCO
16.25 pF, SILICON, VARIABLE CAPACITANCE DIODE CMPAK-4
|
Renesas Electronics Corporation
Samsung Semiconductor Co., Ltd.
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| GC3202-00 GC3205-50 |
UHF BAND, 21.5 pF, 180 V, SILICON, VARIABLE CAPACITANCE DIODE
C BAND, 2.25 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
|
| MA2B27QB MA2B027 MA2B0270A MA2B0270B MA2B027B MA2B |
Silicon epitaxial planar type variable resistor SILICON, PIN DIODE, DO-35
CANKPT02E16-26SX
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| HVD400C |
2.145 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
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