PART |
Description |
Maker |
IS75V16F128GS32-7065BI |
3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
|
Integrated Silicon Solution, Inc.
|
CY7C1019CV33-10ZXA CY7C1019CV33-10ZXAT |
1-Mbit (128 K 8) Static RAM
|
Cypress
|
CY62136EV30LL-45BVXI CY62136EV30LL-45BVXIT CY62136 |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
CY62137EV30LL-45BVXI12 CY62137EV30LL-45ZSXI12 CY62 |
2-Mbit (128 K × 16) Static RAM
|
Cypress Semiconductor
|
CY7C109D-10ZXI CY7C1009D-10VXI CY7C109D-10VXI |
1-Mbit (128 K × 8) Static RAM Low active power
|
Cypress Semiconductor
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
ST1335 ST1355-CW4 ST1335-BD10 ST1335-BD15 ST1335-B |
5-CONTACT MEMORY CARD IC 272 BIT EEPROM WITH ADVANCED SECURITY MECHANISMS 5V, 3.3V, ISR High-Performance CPLDs NX2LP DEVELOPMENT KIT KIT DEV MOBL-USB FX2LP18 MoBL® 4-Mbit (256K x 16) Static RAM MoBL® 1-Mbit (64K x 16) Static RAM MoBL® 1 Mbit (128K x 8) Static RAM MoBL® 2-Mbit (128K x 16) Static RAM (ST1335/13361355) 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms MoBL® 1-Mbit (64K x 16) Static RAM EEPROM 5V, 3.3V, ISR™ High-Performance CPLDs EEPROM MoBL® 4-Mbit (256K x 16) Static RAM EEPROM 5-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms 5,联系记忆卡IC 272位具有高级安全机制的EEPROM
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
|
CY62147DV30L-55BVXE CY62147DV30LL-45BVXI CY62147DV |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 45 ns, PDSO44 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PDSO44 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48 4-Mbit (256K x 16) Static RAM 4兆位56K × 16)静态RAM 4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 70 ns, PBGA48
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256 HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208 JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208 High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn... Integrated Device Technology, Inc. IDT
|