| PART |
Description |
Maker |
| RQJ0303PGDQA RQJ0303PGDQATL-E |
3300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| CM1200HB-66H |
HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric, Corp.
POWEREX[Powerex Power Semiconductors]
|
| PM1200HCE330-1 |
1200 A, 3300 V, N-CHANNEL IGBT
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| MAAM-007866-0P1R00 MAAM-007866-0P1RA1 MAAM-007866- |
Broadband Driver Amplifier 50 to 3300 MHz
|
M/A-COM Technology Solutions, Inc.
|
| MA1944-3300J |
1 ELEMENT, 3300 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR
|
ECLIPTEK CORP
|
| CGH35015F |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| HEMT-3300 |
HEMT-3300 · T-1 3/4 670 nm High Radiant Intensity Emitter
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| QID3310006 |
Dual IGBT HVIGBT Module 100 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| QRJ3310002 QRL3310002 QRE3310002 QRK3310002 |
Fast Recovery Diode Module 100 Amperes/3300 Volts
|
Powerex Power Semiconductors
Powerex Power Semiconductor...
Powerex Power Semicondu...
|
| LXE6.3VB332M18X15LL |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 3300 uF, THROUGH HOLE MOUNT RADIAL LEADED
|
United Chemi-Con, Inc.
|
| PDM-81M-3.8GSQ |
3300 MHz - 4300 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.7 dB INSERTION LOSS
|
MERRIMAC INDUSTRIES INC
|
| EST338M016AL6AA |
Aluminum Electrolytic, 105C LowZ, EST, 3300 uF, 20%, 16 V, -40/ 105C, Lead Spacing = 5mm
|
Kemet Corporation
|
