PART |
Description |
Maker |
K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E- |
Mobile-SDRAM 移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
H57V2582GTR-60C H57V2582GTR-60L H57V2582GTR-75C H5 |
256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
HYNIX SEMICONDUCTOR INC
|
MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
TC59SM704AFTL-70 TC59SM704AFTL-80 TC59SM716AFTL-70 |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
K4S280432I-TL750 |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
IS42S16320B-7BL IS42S16320B-7BLI IS42S16320B IS42S |
64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
|
http:// Integrated Silicon Solution, Inc
|
KMM372V3280BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
|
MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
97SD3232RPME 97SD3232RPMI 97SD3232RPMH 97SD3232RPM |
1 Gb SDRAM 8-Meg X 32 Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, QFP132
|
Maxwell Technologies, Inc
|