| PART |
Description |
Maker |
| MN414170SJ-08 MN4117400TTR-08 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
4M X 4 FAST PAGE DRAM, 80 ns, PDSO24
|
PANASONIC CORP
|
| TC514410AP-80 TC514410ASJ-10 |
1M X 4 FAST PAGE DRAM, 80 ns, PDIP20
1M X 4 FAST PAGE DRAM, 100 ns, PDSO20
|
|
| IS41LV8205-50J IS41LV8205-50JI IS41LV8205-60JI IS4 |
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| HM514280ALZ-7 HM514280ALTT-7 HM514280ALJ-10 |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40
256K X 18 FAST PAGE DRAM, 70 ns, PDSO40
256K X 18 FAST PAGE DRAM, 100 ns, PDSO40
|
|
| MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40
DRAM / FAST PAGE MODE TYPE
262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD
OKI electronic componets
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| MSM5116160F MSM5116160F-50JS MSM5116160F-60JS MSM5 |
1M X 16 FAST PAGE DRAM, 60 ns, PDSO44
1M X 16 FAST PAGE DRAM, 70 ns, PDSO42
1,048,576-Word 】 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
1,048,576-Word × 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD
OKI electronic componets
|
| AS4C14400-50TC AS4C14400-50JC |
1M-bit 4 CMOS DRAM (Fast page mode or EDO) 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20
1M-bit ??4 CMOS DRAM (Fast page mode or EDO)
|
Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
| GM71V17400CT-6 GM71V17400CCL |
x4 Fast Page Mode DRAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
|
|
| MSM51V16400D MSM51V16400DSL MSM51V16400D-50SJ MSM5 |
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 4194304字4位动态随机存储器：快速页面模式型
DRAM / FAST PAGE MODE TYPE
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| HYB314100BJL-70 HYB314100BJL-60 HYB314100BJ-50 HYB |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM 4米1位动态随机存储器的低功米1位动态随机存储器
4M X 1 FAST PAGE DRAM, 70 ns, PDSO20 0.300 INCH, PLASTIC, SOJ-26/20
4M x 1-Bit Dynamic RAM(Fast Page Mode)(4M x 1动RAM(快速页面模)
|
http://
Infineon Technologies AG
SIEMENS AG
|
| MT4C4001JCZ-10_883C MT4C4001JCZ-10_IT MT4C4001JCZ- |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
AUSTIN[Austin Semiconductor]
|
