| PART |
Description |
Maker |
| IRFD122 |
(IRFD123) Field Effect Power Transistor
|
General Electric Solid State
|
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| VN30ABA VN35ABA |
Field Effect Power Transistor
|
General Electric Solid State
|
| MRF6S21100NR1 MRF6S21100NBR1 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MAPLST1617-030CF |
RF Power Field Effect Transistor
|
Tyco Electronics
|
| MRF8S7120NR3 |
RF Power Field Effect Transistor
|
Motorola
|
| MRF6S27015NR1_07 MRF6S27015GNR1 MRF6S27015NR1 MRF6 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF8P8300HR6 MRF8P8300HSR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF6P3300HR5 MRF6P3300H MRF6P3300HR3 MRF6P3300HR3_ |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
