| PART |
Description |
Maker |
| MGS13002D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGW12N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGY25N120D-D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| 2316226 |
End cover for FB-PS-BASE/EX base. Use in power and indicator bus at each end base.
|
PHOENIX CONTACT
|
| STL34NF06 |
N-CHANNEL 60V 0.024 OHM 34A POWERFLAT LOW GATE CHARGE STRIPFET II MOSFET
N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩II MOSFET
N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT LOW GATE CHARGE STripFETII MOSFET
N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT LOW GATE CHARGE STripFET?II MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| EPG4011J-RCTR |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
Samsung Semiconductor Co., Ltd.
|
| EPG4012J |
1000Base-T Module
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S)
|
PCA ELECTRONICS INC.
|
| EPG4014S-RCTR |
DATACOM TRANSFORMER FOR 10/100 BASE-TX; 1000 BASE-T APPLICATION(S) ROHS COMPLIANT
|
Samsung Semiconductor Co., Ltd.
|
| G1PM109N1-LF G1PM109N1LF |
Compliant with IEEE 802.3ab standard for 1000 BASE-T
2.5G/5G BASE?T SINGLE PORT
|
Bothhand USA, LP.
|
