PART |
Description |
Maker |
HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT |
45 A, 600 V, UFS N-Channel IGBT Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB 45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
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APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation http:// Microsemi, Corp.
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IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT 75 A, 600 V, N-CHANNEL IGBT, TO-268AA HiPerFAST IGBT
|
IXYS Corporation
|
IRG4PC50U IRG4PC50U-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD 55 A, 600 V, N-CHANNEL IGBT, TO-247AC 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.65V的,@和VGE \u003d 15V的,集成电路\u003d 27A条)
|
IRF[International Rectifier] International Rectifier, Corp.
|
ILA03N60 ILD03N60 |
3 A, 600 V, N-CHANNEL IGBT, TO-220AB 4.5 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
INFINEON TECHNOLOGIES AG
|
SGH80N60UFD SGH80N60UFDTU |
Discrete, High Performance IGBT with Diode Ultrafast IGBT 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 80 A, 600 V, N-CHANNEL IGBT
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
CM75DY-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc. Powerex Power Semiconductors
|
FGH40N60SF FGH40N60SFTU |
80 A, 600 V, N-CHANNEL IGBT, TO-247AB 600V, 40A Field Stop IGBT
|
FAIRCHILD SEMICONDUCTOR CORP
|
PHMB300A6 |
IGBT MODULE Single 300A 600V 300 A, 600 V, N-CHANNEL IGBT
|
Nihon Inter Electronics, Corp. NIEC[Nihon Inter Electronics Corporation]
|
CM150DU-12F |
IGBT MODULES HIGH POWER SWITCHING USE 150 A, 600 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|