PART |
Description |
Maker |
APT36N90BC3G |
Super Junction MOSFET Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation Microsemi, Corp.
|
J174 J176 J177 J175 |
P-channel silicon field-effect transistors RESISTOR SILICONE 900 OHM 5W
|
Philips Semiconductors / NXP Semiconductors PHILIPS[Philips Semiconductors]
|
STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET
|
ST Microelectronics
|
SXL-208-BLK SXL-208-TR1 SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 100/TRAY. 800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7 800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13
|
Stanford Microdevices
|
TMP95C061B E_030331_95C061B_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series From old datasheet system
|
Toshiba
|
TMP96C141B |
16-Bit Microcontroller TLCS-900 Family: 900 Series
|
Toshiba
|
TMP93PW46A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP93CS42A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
MUR1100E MUR190E ON2734 |
1 A, 900 V, SILICON, SIGNAL DIODE ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
2SK1942-01 |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
2SK1943-01 |
OSC 5V 8PIN CMOS 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel MOS-FET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric]
|
SXL-189-EB |
800-1000 MHz, 50 Ohm power MMIC amplifier. High linearity performance: 42dBm typ. at 900 MHz. Eval board.
|
Stanford Microdevices
|