| PART |
Description |
Maker |
| DSEC60-03A DSEC60-03AR |
Fast Recovery Diodes
TVS 400W 10V UNIDIRECT SMA
HiPer FREDTM Epitaxial Diode with common cathode and soft recovery 30 A, 300 V, SILICON, RECTIFIER DIODE
|
IXYS Corporation
IXYS, Corp.
|
| DT105N10LOF-A DT105N16KOF-K DT105N16LOF-A DT105N12 |
160 A, 1000 V, SCR MODULE-5
160 A, 1600 V, SCR MODULE-5
160 A, 1200 V, SCR MODULE-5
160 A, 1400 V, SCR MODULE-5
120 A, 800 V, SCR MODULE-5
75 A, 800 V, SCR
100 A, 1600 V, SCR
160 A, 800 V, SCR
160 A, 600 V, SCR
|
Unisonic Technologies Co., Ltd.
|
| 2M6.8Z 2M2.Z 2M2.0Z 2M160Z 2M30Z 2M39Z 2M36Z 2M47Z |
2.0 Watts Glass Passivated Junction Silicon Zener Diodes
160 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-15
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
Taiwan Semiconductor Co...
|
| WG160160A |
LCD MODULE GRAPHIC 160 x 160 DOTS
|
WINSTAR
List of Unclassifed Manufacturers
|
| DTA08 DTA08E |
TVS 1500W 7.0V UNIDIRECT SMC 0.8A双向可控
0.8A Bidirectional Thyristor
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| LCD-160G160B |
160 x 160 Dots Graphic LCD
|
VISAY[Vishay Siliconix]
|
| MQ200 |
160 A, SILICON, RECTIFIER DIODE, TO-249AA
|
SENSITRON SEMICONDUCTOR
|
| AD8304 AD8304ARU AD8304ARU-REEL AD8304ARU-REEL7 AD |
160 dB Logarithmic Amplifier with Photo-Diode Interface
160 dB Range (100 pA -10 mA) Logarithmic Converter
|
AD[Analog Devices]
|
| WM2616 WM2616ID WM2616CD |
From old datasheet system
12-BIT SERIAL INPUT VOLTAGE OUTPUT DAC
TVS UNIDIRECT 78V 600W SMB
|
WOLFSON[Wolfson Microelectronics plc]
|
| UPD16667 UPD16667N UPD16667N-051 UPD16667N-XXX |
160-OUTPUT LCD ROW DRIVER 160输出的液晶显示器列驱
STN-LCD common driver, 160-outputs, 40V
|
NEC, Corp.
NEC[NEC]
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
|
Toshiba Corporation
Toshiba Semiconductor
|
| IRLU3410PBF |
Asynchronous SRAM; Organization (word): 512K; Organization (bit): x 8; Memory capacity (bit): 4M; Access time (ns): 12; Supply voltage (V): 4.5 to 5.5; Operating temperature (°C): 0 to 70; Package: SOJ (36); Status: Remarks:
|
International Rectifier
|
