| PART |
Description |
Maker |
| KM23C8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜 ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C8100D KM23C8100DG |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M1Mx8 /512Kx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C8105ET KM23C8105DET KM23C8105DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29LV800BA-12PBT |
IC,EEPROM,NOR FLASH,512KX16/1MX8,CMOS,BGA,48PIN
|
Fujitsu
|
| M29F800AT55M1 |
EEPROM,FLASH,512KX16/1MX8,CMOS,SOP,44PIN,PLASTIC
From old datasheet system
|
ST Microelectronics
|
| K6T8016C3M-TB70 K6T8016C3M-TF70 K6T8016C3M-RB70 K6 |
512Kx16 bit Low Power CMOS Static RAM Data Sheet
512Kx16 bit Low Power CMOS Static RAM 512Kx16位低功耗CMOS静RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM23C8000D KM23C8000DG |
8M-Bit (1Mx8) CMOS Mask ROM(8M1Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MX29LV800TXBI-90 MX29LV800TXEC-90 MX29LV800TXEI-90 |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
| BS616LV8018 BS616LV8018FIP70 BS616LV8018FC BS616LV |
From old datasheet system
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| K6T8008C2M K6T8008C2M-B K6T8008C2M-F K6T8008C2M-RB |
1Mx8 bit Low Power and Low Voltage CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
