| PART |
Description |
Maker |
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| MGP11N60ED_D ON1850 MGP11N60ED ON1849 |
IGBT IN TO-220 11 A @ 90C15 A @ 25C 600 VOLTS
From old datasheet system
SHORT CIRCUIT RATED LOW ON-VOLTAGE 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
ON Semiconductor
|
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| CM75TF-12H |
Six-IGBT IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| SDR626CT/3 SDR623CT/3 SDR623CT-3 |
40A 35nsec 300-600 V Hyper Fast Centertap Rectifier 40A35nsec 300-600 V超快速整流器Centertap
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| IXGR50N60B2D1 IXGR50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
68 A, 600 V, N-CHANNEL IGBT ISOPLUS247, 3 PIN
|
IXYS, Corp.
|
| IXGR40N60B2 |
60 A, 600 V, N-CHANNEL IGBT ISOPLUS 247, 3 PIN
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS, Corp.
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| CM75DU-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| RJH60D3DPE-00-J3 RJH60D3DPE |
30 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
