PART |
Description |
Maker |
M27V101-150K6TR M27V101-100F6TR |
128K X 8 OTPROM, 150 ns, PQCC32 128K X 8 UVPROM, 100 ns, CDIP32
|
STMICROELECTRONICS
|
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM 256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存) 256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
AS7C3128PFS36A AS7C3128PFS32 AS7C3128PFS36A-4TQC A |
128K x 36 synchronous SRAM, 133 MHz 128K x 36 synchronous SRAM, 150 MHz 128K x 36 synchronous SRAM, 166 MHz 128K x 32 synchronous SRAM, 100 MHz 128K x 32 synchronous SRAM, 133 MHz 128K x 32 synchronous SRAM, 150 MHz 128K x 32 synchronous SRAM, 166 MHz 128K X 32 STANDARD SRAM, 5 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 36 STANDARD SRAM, 5 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 36 STANDARD SRAM, 3.8 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 32 STANDARD SRAM, 3.8 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 32 STANDARD SRAM, 3.5 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 36 STANDARD SRAM, 3.5 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 128K x 32/36 synchronous SRAM
|
Alliance Semiconductor, Corp.
|
HY512264LJC-60 HY512264SLTC-60 |
128K X 16 EDO DRAM, 60 ns, PDSO40
|
HYNIX SEMICONDUCTOR INC
|
A43L8316 |
128K X 16 Bit X 2 Banks Synchronous DRAM
|
AMIC Technology
|
MX23C1010 MX23C1010MC-10 MX23C1010MC-12 MX23C1010M |
1M-BITMASKROM(8BITOUTPUT) From old datasheet system 1M-BIT MASK ROM(8 BIT OUTPUT) MINIATURE GENERAL PURPOSE RELAY 128K X 8 MASK PROM, 45 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 90 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 150 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 100万位掩码光盘位输出) 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PDIP32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 70 ns, PDSO32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 120 ns, PQCC32 1M-BIT MASK ROM (8 BIT OUTPUT) 128K X 8 MASK PROM, 100 ns, PDSO32
|
MCNIX[Macronix International] Macronix 旺宏 Macronix International Co., Ltd. Altera, Corp.
|
UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL Architecture x4 EDO Page Mode DRAM 512K (32K x 16) Static RAM 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
CXK5T81000ATM/AYM/AM-12LLX CXK5T81000ATM/AYM/AM-10 |
128K X 8 STANDARD SRAM, 120 ns, PDSO32 128K X 8 STANDARD SRAM, 100 ns, PDSO32 131072-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
GVT71128E36B-7 GVT71128E36T-7 |
128K X 36 STANDARD SRAM, 7.5 ns, PBGA119 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119 128K X 36 STANDARD SRAM, 7.5 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
|
Cypress Semiconductor, Corp.
|
MT58L128L18FT-6.8T |
128K X 18 STANDARD SRAM, 6.8 ns, PQFP100 PLASTIC, MS-026, TQFP-100 128K X 18 CACHE SRAM, 6.8 ns, PQFP100 PLASTIC, MS-026, TQFP-100
|
Cypress Semiconductor, Corp.
|
AM27C010-105DC |
128K X 8 UVPROM, 100 ns, CDIP32
|
ADVANCED MICRO DEVICES INC
|
|