| PART |
Description |
Maker |
| PQ12RA11 PQ09RA1 PQ09RA11 PQ05RA1 PQ12RA1 PQ05RA11 |
OFF-STATE LOW DISSIPATION CURRENT 1A OUTPUT, LOW POWER-LOSS VOLTAGE REGULATORS
|
SHARP[Sharp Electrionic Components]
|
| PQ1CZ21H2ZPH |
Low Dissipation Current at OFF-state Chopper Regulator
|
Sharp Electrionic
|
| PQ12RA11 PQ05RA1 PQ05RA1_01 PQ05RA11 PQ09RA1 PQ09R |
VOLT REGULATOR|FIXED| 9V|BIPOLAR|SIP|4PIN|PLASTIC 电压调节器|定额| 9伏|双极|园区| 4芯|塑料
OFF-state Low Dissipation Current 1A Output, Low Power-Loss Voltage Regulators
|
SHARP[Sharp Electrionic Components]
Sharp Electrionic Compo...
|
| BCP69-16 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., Ltd
|
| 2SC3052 |
Collector current :IC=0.2A Power dissipation :PC=0.15W
|
TY Semiconductor Co., Ltd
|
| FCX790A |
2W power dissipation, 6A peak pulse current
|
TY Semiconductor Co., Ltd
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 2SB906 |
Low collector saturation voltage. High power dissipation.
|
TY Semiconductor Co., Ltd
|
| FCX717 |
2W power dissipation, Extremely low saturation voltage E.g. 12mv Typ
|
TY Semiconductor Co., Ltd
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
