PART |
Description |
Maker |
SST28SF040A SST28SF040A-120 SST28SF040A-120-4C-EH |
4 Mbit (512K x8) SuperFlash EEPROM 4 Mbit (512K x 8) super-flash EEPROM
|
SST[Silicon Storage Technology, Inc]
|
SST28VF040A-200-4I-NH SST28SF040A SST28SF040A_03 S |
4 Mbit (512K x8) SuperFlash EEPROM
|
SST[Silicon Storage Technology, Inc]
|
SST34HF1621C-70-4E-L1PE SST34HF1621C-70-4E-LSE |
16 Mbit Concurrent SuperFlash 2/4 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PBGA56
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
SST34HF1681J-70-4E-LSE SST34HF1641J-70-4E-LSE SST3 |
16 Mbit Concurrent SuperFlash 4/8 Mbit PSRAM ComboMemory
|
Silicon Storage Technology, Inc.
|
SST36VF1601 SST36VF1601-70-4C-BK SST36VF1601-70-4C |
16 Mbit Concurrent SuperFlash
|
SST[Silicon Storage Technology, Inc]
|
SST27VF040 27VF040 |
4 Megabit (512K x 8) SuperFlash MTP From old datasheet system
|
SST
|
SST36VF3203 |
32 Mbit (x8/x16) Concurrent SuperFlash
|
SST
|
SST36VF3204 SST36VF3204-70-4I-EKE SST36VF3203 SST3 |
32 Mbit (x8/x16) Concurrent SuperFlash
|
SST[Silicon Storage Technology, Inc]
|
SST36VF3204-70-4E-EKE SST36VF3204-70-4E-B3KE |
32 Mbit (x8/x16) Concurrent SuperFlash
|
Silicon Storage Technology, Inc.
|
CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes 4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation Intel Corp.
|