| PART |
Description |
Maker |
| 632P103X5050 632P103X9050 632P104X9400 632P105X940 |
Film Capacitors Metalized Polycarbonate/ Wrap-and-Fill
Film Capacitors Metalized Polycarbonate, Wrap-and-Fill 金属化薄膜电容器聚碳酸酯，总结和充
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
http://
|
| 430P106X9100 430P394X9600 430P394X9400 430P394X920 |
Metalized Polyester Film Capacitors Wrap-and-Fill 金属化聚酯薄膜电容器总结和充
DC-DC Converter, 1Watt, Input VDC: 24, Output VDC: 24, Max Output Current(A): 0.042, Package: SIP4, Isolation(VDC): 3000, Operating Temp. -40C to 85C, Low Ripple & Noise, High Efficiency up to 80%, Low Profile Plastic Case, Single Output
CAP .012UF 16V PPS FILM 1206 5%
Metalized Polyester Film Capacitors Wrap-and-Fill
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
http://
|
| PMD105M2E |
METALIZED POLYPROPYLENE FILM CAPACITORS PMD Series: Radial Dipped
|
RFE international
|
| PRF136 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1402 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1107 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1174 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1108 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2047 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F5001 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2247 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
