| PART |
Description |
Maker |
| W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240
256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240
64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc.
XILINX INC
|
| HMP125S6EFR8C-C4 HMP125S6EFR8C-S5 HMP125S6EFR8C-S6 |
256M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 HALOGEN FREE AND ROHS COMPLIANT, SODIMM-200
200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
|
| M312L5720CZ0-CA2 |
256M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
|
| K4H1G0638B-TLB00 K4H1G0738B-TCB00 |
256M X 4 DDR DRAM MODULE, 0.75 ns, PDSO66
128M X 8 DDR DRAM MODULE, 0.75 ns, PDSO66
|
|
| HY5DU56422ALT-K HY5DU56422ALT-J HY5DU56822ALT-J HY |
256M-S DDR SDRAM 64M X 4 DDR DRAM, 0.7 ns, PDSO66
256M-S DDR SDRAM 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HYMP125P72CP4L-C4 HYMP41GP72CNP4L-C4 HYMP41GP72CNP |
240pin DDR2 VLP Registered DIMMs
512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
| HMT125R7BFR4C-G7 HMT125R7BFR4C-H9 HMT125R7BFR8C-G7 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
240pin DDR3 SDRAM Registered DIMM
|
HYNIX SEMICONDUCTOR INC
|
| MT16HTF25664AIZ-80EHI MT16HTF25664AIZ-800XX |
256M X 64 DDR DRAM MODULE, DMA240 HALOGEN FREE, MO-237, UDIMM-240
|
Moeller Electric, Corp.
|
| EBJ21EE8BAWA-8C-E EBJ21EE8BAWA-AE-E EBJ21EE8BAWA-D |
256M X 72 DDR DRAM MODULE, DMA240
2GB Unbuffered DDR3 SDRAM DIMM
|
ELPIDA MEMORY INC
|
| HYS72T256000ER-3.7-B |
240-Pin Registered DDR2 SDRAM Modules 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Qimonda AG
|
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
|
