| PART |
Description |
Maker |
| MBM150GR12A |
150 A, 1200 V, N-CHANNEL IGBT
|
|
| BSM100GT120DN2 100T12N2 |
IGBT Power Module (Three single switches Including fast free-wheeling diodes Package with insulated metal base plate) 150 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IXDN75N120 L209 |
High Voltage IGBT
IGBT Discretes: NPT IGBT
From old datasheet system
High Voltage IGBT 150 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| FZ50A06KL DF100R12KF-A FZ1200R12KF1 |
50 A, 600 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
1200 A, 1200 V, N-CHANNEL IGBT
|
Vishay Intertechnology, Inc.
|
| MGY25N120_D ON1934 MGY25N120 |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| PM150DSA12 PM150DSA120 |
Module Three Phase Brake IGBT Inverter Output
Intellimod Module Single Phase IGBT Inverter Output (150 Amperes/1200 Volts)
Intellimod⑩ Module Single Phase IGBT Inverter Output (150 Amperes/1200 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| VS-GB150TH120U |
Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A
|
Vishay Siliconix
|
| VS-GB150LH120N |
Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 150 A
|
Vishay Siliconix
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
