PART |
Description |
Maker |
H5TC4G83AFR-G7A H5TC4G83AFR-PBA H5TC4G43AFR H5TC4G |
4Gb DDR3L SDRAM
|
Hynix Semiconductor
|
SLN04G72F1BB1SA-CCRT |
4GB DDR3L ?SDRAM ECC SO-UDIMM
|
List of Unclassifed Man...
|
MT18KDF1G72PZ MT18KDF1G72PZ-1G4 MT18KDF1G72PZ-1G6 |
1.35V DDR3L SDRAM RDIMM
|
Micron Technology
|
MT41K512M16 |
32 Meg x 16 x 8 Banks 1.35V DDR3L-RS SDRAM
|
Micron Technology
|
MT29F4G08ABADAH4 MT29F4G16ABBDAH4 MT29F8G08ADADAH4 |
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features
|
Micron Technology
|
MB84VP24491HK-70PBS MB84VP24491HK |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM 128M的(x16)的快闪记忆2M的(x16)的移动FCRAMTM
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
MB84VD23180FM |
64M (x16) FLASH MEMORY AND 4M (x16) STATIC RAM 6400(x16)的快闪记忆体和4M(x16)的静态RAM
|
Spansion, Inc.
|
MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71 TRIMMER, 15 TURN 20K CONN HEADER 12POS DL PCB 30GOLD 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
MX29LV800BXBI-70 MX29LV800TXBI-70 MX29LV800BTI-90 |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 240 x 320 pixel format (portrait mode), Compact LCD size 25 A 35V Schottky Rectifier; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 25 A 35V Schottky Rectifier; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73 Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes CONN, M HEADER ST 1X2 .230 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
TS4GJF220 |
4GB USB2.0 JetFlash垄芒220 4GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
MB84VD22181FM-70PBS MB84VD22191FM-70PBS |
32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM 32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM 32M的(x16)的快闪记忆
|
Spansion Inc. Spansion, Inc.
|