| PART |
Description |
Maker |
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| BAS16 Q62702-F739 |
Silicon Switching Diode (For high-speed switching) 0.25 A, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAR81W |
PIN Diodes - RF switching diode for use in shunt configuration
Silicon RF Switching Diode
|
INFINEON[Infineon Technologies AG]
|
| BAW78C Q62702-A779 BAW78A Q62702-A784 BAW78A-BAW78 |
Silicon Switching Diodes (Switching applications High breakdown voltage) 1 A, SILICON, SIGNAL DIODE
From old datasheet system
|
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CMPD3003C CMPD3003A CMPD3003S CMPD300310 CMPD3003C |
SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE
0.6 A, 180 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
| CMLD2004 CMLD2004S CMLD2004A CMLD2004C CMLD2004DO |
SMD Switching Diode Dual: Common Cathode
SMD Switching Diode Dual: Opposing Polarity
SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| JAN1N4153-1 |
Silicon Switching Diode DO-35 Glass Package 0.15 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
|
| HVD142 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
Silicon Epitaxial Planar Pin Diode for Antenna Switching
From old datasheet system
|
Hitachi Semiconductor
|
| 1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9
Diode Switching 100V 240A 2-Pin DO-9
Diode Switching 1KV 300A 2-Pin DO-9
Diode Switching 1.4KV 240A 2-Pin DO-9
Diode Switching 300V 240A 2-Pin DO-9
Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
| HVD145 |
Diodes>Switching
Silicon Epitaxial Planar Pin Diode for Antenna Switching
|
Renesas Electronics Corporation
|
