| PART |
Description |
Maker |
| IRFD312R |
300 mA, 400 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
HARRIS SEMICONDUCTOR
|
| NGB8202N NGB8202NT4 |
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
20 A, 400 V, N-Channel D2PAK
20 A, 400 V, N−Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| FSTH-38R |
300 / 400 MHz Band Chip 0 deg. Splitter / Combiner
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| T300/04 |
VDRM / VRRM (V) = 400-1800 IT(AV) (A) = 300 At TC (oC) = 85 Itsm (KA) = 7 RTH(J-C)Sin180 = 0.084 Case = Z
|
Usha Ltd.
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| MJE5852 MJE5850 MJE5851 ON2041 |
8 AMPERE PNP SILICON POWER TRANSISTORS 300- 350- 400 VOLTS 80 WATTS
From old datasheet system
|
Motorola, Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| CM300HA-28H |
Single IGBTMOD 300 Amperes/1400 Volts 300 A, 1400 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| TAS5630B TAS5630BDKDR TAS5630BPHDR TAS5630B-17 |
<font color=red>[Old version datasheet]</font> 300-W Stereo and 400-W Mono PurePath HD Analog-Input Power Stage
|
TI store
|
| MURP20040CT MURP20020CT MURP20020CT_06 MURP20020CT |
100 A, 300 V, SILICON, RECTIFIER DIODE
ULTRAFAST RECTIFIERS 200 AMPERES, 200−400 VOLTS
|
ONSEMI[ON Semiconductor]
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| RFP8P06E RFD8P06ESM RFD8P06E FN3937 RFD8P06 |
From old datasheet system
8A/ 60V/ 0.300 Ohm/ P-Channel Power MOSFETs
8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs 8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的，0.300欧姆，拉德硬，SEGR性，P通道功率MOSFET
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
|
