| PART |
Description |
Maker |
| 2SK360E 2SK360 |
Silicon N Channel MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Hitachi Semiconductor
|
| 3SK300 |
Silicon N Channel MOS FET
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SJ196 2SJ196-T 2SJ196-T/JD 2SJ196-T/JM 2SJ195FA |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| P通道| 100V的五（巴西）直| 4A条（丁）|52VAR
P-CHANNEL MOS FET FOR SWITCHING
|
Sanyo Electric Co., Ltd.
NEC[NEC]
|
| 2SK2713 A5800296 |
Transistors > MOS FET > Power MOS FET
From old datasheet system
Switching (450V, 5A)
|
ROHM
|
| BF1205 |
Dual N-channel dual gate MOS-FET
|
PHILIPS[Philips Semiconductors]
|
| BF1102 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| 2SK168 2SK168E 2SK168D 2SK168F |
Silicon N Channel MOS FET
Silicon N-Channel Junction FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR|JFET|N-CHANNEL|8MA I(DSS)|TO-92
TRANSISTOR|JFET|N-CHANNEL|20MA I(DSS)|TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 12mA的我（直）|2
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| 2SJ324 2SJ324-Z-T1 2SJ324-Z-E2 2SJ324-Z-T2 2SJ324- |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
|
| BF904WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors
Philips Semiconductors
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
| 2N7002SPT |
Dual N-Channel Enhancement MOS FET
|
Chenmko Enterprise Co. Ltd.
|
