| PART |
Description |
Maker |
| IXKH35N60C5 |
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
|
IXYS Corporation
|
| SPB70N10L SPI70N10L SPP70N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=16mOhm, 70A, LL
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=16mOhm, 70A, LL
|
INFINEON[Infineon Technologies AG]
|
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| AM2305P |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM2319P |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
| SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL
OptiMOS Power-Transistor 的OptiMOS功率晶体
80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
|
INFINEON[Infineon Technologies AG]
|
| SPD07N20 |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 7.0A, NL
|
Infineon
|
| SPB21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=85mOhm, 21A, NL
|
Infineon
|
| BSP171P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
|
