| PART |
Description |
Maker |
| FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
GaAs FET & HEMT Chips
|
Eudyna Devices Inc
Fujitsu Media Devices Limited
|
| FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
X-Band Internally Matched FET
|
Eudyna Devices Inc
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体
CAP 15UF 16V 10% TANT SMD-6032-28 TR-7
CAP TANTALUM 1.5UF 35V 10% SMD
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp.
NEC Corp.
NEC[NEC]
http://
|
| TIM5964-6UL |
C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
MICROWAVE POWER GaAs FET
|
Toshiba Semiconductor
Toshiba Corporation
|
| NE6500496 |
4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
4 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
|
| NEZ6472-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| ELM5964-4PST |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
|
| CFH2162-P509 |
2.3 to 2.5 GHz
S BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband
MIMIX BROADBAND INC
|
| 2SK676H5-3 |
K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
|
|
