| PART |
Description |
Maker |
| HSCH-9201TC494 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
AGILENT TECHNOLOGIES INC
|
| DMK3379-000-295-011 DMK3248-000-417-001 |
GALLIUM ARSENIDE, KU BAND, MIXER DIODE
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| DGB9335 DGB9344 DGB9345 DGB8544 DGB8514 DGB8164 DG |
12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
18 GHz - 26.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
5 GHz - 8.2 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
40 GHz - 60 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
8.2 GHz - 12.4 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
SKYWORKS SOLUTIONS INC
|
| DGSK40-025A |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AB
|
IXYS, Corp.
|
| MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| MGV125-21-P55 MGV075-15-P55 MGV100-24-P55 MGV075-1 |
KA BAND, 0.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.33 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.63 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.43 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 1.83 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.48 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE HERMETIC SEALED, CERAMIC PACKAGE-2
KA BAND, 0.58 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE CERAMIC PACKAGE-2
|
NIC Components, Corp.
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| GN01019B |
Gallium Arsenide Devices
|
Panasonic
|
| GN04005 |
Gallium Arsenide Devices
|
Panasonic
|
|
