| PART |
Description |
Maker |
| 2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
| 2SB1219A |
Large collector current IC. Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system
PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| DS1393U-18 DS1392U-33 DS1393U-33 DS1390 DS1390U-3 |
RIBBON CABLE, 40WAY, PER M; Cores, No. of:40; Conductor make-up:7/36AWG; Wire size, AWG:28AWG; Impedance:119R; Pitch:1.27mm; Voltage rating, AC:50V; Colour:Grey; Capacitance:70.5pF/m; Approval Bodies:UL; Approval category:Style RoHS Compliant: Yes
Low-Voltage SPI/3-Wire RTCs with Trickle Charger 1 TIMER(S), REAL TIME CLOCK, PDSO10
IGBT Module; Continuous Collector Current, Ic:200A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:1500W; Collector Current:200A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
MAXIM - Dallas Semiconductor
|
| DC337-16-25-40 BC327-16 BC328-16 ON0144 BC328-25 |
Amplifier Transistors(PNP Silicon)
From old datasheet system
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
CASE 29-04, STYLE 17 TO-2 (TO-26AA)
|
ON Semiconductor
Siemens Semiconductor Group
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| HDMP-1014 HDMP-1012 |
Bipolar Transistor; Collector Emitter Voltage, Vceo:400V; Transistor Polarity:N Channel; Power Dissipation:250W; C-E Breakdown Voltage:400V; DC Current Gain Min (hfe):10; Collector Current:50A; Package/Case:TO-3
Phase Lock Loop (PLL) IC; Number of Circuits:1; Package/Case:14-DIP; Mounting Type:Through Hole 4Low成本千兆速率发接收芯片
|
Agilent(Hewlett-Packard)
|
| BCP54-10 BCP54BCP56 Q62702-C2120 Q62702-C2148 Q627 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
NPN Silicon AF Transistors (For AF driver and output stages High collector current) NPN硅晶体管自动对焦（为自动驱动器和输出级高集电极电流）
NPN Silicon AF Transistors (For AF driver and output stages High collector current) 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Siemens Semiconductor G...
|
| BDP947 BDP949 Q62702-D1337 Q62702-D1335 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| C62702-C941 C62702-C942 C62702-C943 |
PNP Silicon Darlington Transistors (High current gain High collector current)
|
SIEMENS AG
Siemens Semiconductor Group
|
| BC878 BC880 |
PNP Silicon Darlington Transistors (High current gain High collector current)
|
Siemens Semiconductor Group
|
