| PART |
Description |
Maker |
| SIR662DP-T1-GE3 |
Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R
|
Vishay Siliconix
|
| SUB60N06-18-E3 |
Trans MOSFET N-CH 60V 60A 3-Pin(2 Tab) TO-263
|
Vishay Siliconix
|
| GP1A38L7 GP1A38L5 |
MOSFET N-CH 60V 200MW SOT-323 多通道光电断路器海外私人投资公司与连接
ARRAY NPN TRANS/SW DIODE SOT363
Multi-channel OPIC Photointerrupter with Connector
|
Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| STB3020L 6474 |
CSED, FLANGE KIT 400A -通道30V 0.019ohm - 40A采用D2PAK STripFET]功率MOSFET
From old datasheet system
N - CHANNEL 30V - 0.019 - 40A - D 2 PAK STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.019ohm - 40A - D2PAK STripFET] POWER MOSFET
N - CHANNEL 30V - 0.019W - 40A - D 2 PAK STripFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| FDB035AN06A0 FDB035AN06A0NL |
N-Channel PowerTrench MOSFET 60V/ 80A/ 3.5m
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mз
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
N-Channel PowerTrench MOSFET 60V, 80A, 3.5mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2N5821 |
Trans GP BJT PNP 60V 0.75A 3-Pin TO-92
|
New Jersey Semiconductor
|
| STW40NS15 |
40 A, 150 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY MOSFET
N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY⑩ MOSFET
N-CHANNEL 150V 0.042 OHM 40A TO-247 MESH OVERLAY MOSFET
|
STMicroelectronics
ST Microelectronics
|
| RJF0618JPE |
60V-40A Silicon N Channel Thermal FET Power Switching
|
Renesas Electronics Corporation
|
| STP3020 STP3020L 6475 |
N - CHANNEL 30V - 0.019W - 40A - TO-220 STripFET POWER MOSFET
N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET
From old datasheet system
N - CHANNEL 30V - 0.019 - 40A - TO-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET
N - CHANNEL POWER MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 2SK1297 |
V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching
|
Hitachi Semiconductor
|
