PART |
Description |
Maker |
TC3539 |
4.8 - 6 GHz 29dBm Self-Bias MMIC
|
Transcom, Inc.
|
ZX60-M-SERIES ZX60-2510M ZX60-2514M ZX60-2522M ZX6 |
High Isolation Amplifiers 50з, 0.5 to 5.9 GHz 500 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER High Isolation Amplifiers 50? 0.5 to 5.9 GHz From old datasheet system High Isolation Amplifiers 50/ 0.5 to 5.9 GHz
|
MINI[Mini-Circuits]
|
TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
ES0013 |
High Power Switch 8 GHz to 18 GHz
|
Micronetics, Inc.
|
ES0309-20 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
INA-31063 INA-31063-TR1 |
DC-2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大 3V Fixed Gain. High Isolation amplifier 的DC - 2.5 GHz3伏,高隔离硅射频放大器(直流.5 GHz3伏,高隔离硅射频集成电路放大器) 0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Agilent(Hewlett-Packard) AGILENT TECHNOLOGIES INC
|
PE15A1006 |
40 dB Gain, 1.1 dB NF, 15 dBm, 3.1 GHz to 3.5 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
GALI-74 |
Surface Mount Monolithic Amplifier 50з, High dynamic range, DC to 1 GHz 0 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Surface Mount Monolithic Amplifier 50? High dynamic range, DC to 1 GHz Surface Mount Monolithic Amplifier 50/ High dynamic range/ DC to 1 GHz
|
Mini-Circuits
|