PART |
Description |
Maker |
RJK60S3DPP-E0 RJK60S3DPP-E0-T2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK5026DPP-E0 RJK5026DPP-E0-15 RJK5026DPP-E0T2 RJK |
500V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK5002DPD RJK5002DPD-00J2 RJK5002DPD-15 |
500V - 2.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
BT138-600 BT138-600F BT138-600G BT138-500/B BT138- |
TRIAC 12A SOT-186A TRIAC 12A/600V TRIAC 12A/500V Triacs
|
Philips Semiconductors
|
APT5020BN APT5022BN |
POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT5025BN APT5030BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
AOTF12N50 AOT12N50 |
500V, 12A N-Channel MOSFET
|
Alpha & Omega Semiconductors
|
APT5026HVR |
POWER MOS V 500V 18.5A 0.260 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT5017 APT5017SVR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|