| PART |
Description |
Maker |
| KX7N10L |
VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A
|
TY Semiconductor Co., Ltd
|
| KX020N06 |
VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V)
|
TY Semiconductor Co., L...
|
| KDB3672 |
rDS(ON) =24m (Typ.), VGS = 10V, ID =44A Qg(tot) = 24nC (Typ.), VGS = 10V
|
TY Semiconductor Co., L...
|
| KDB3652 |
rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Qg(tot) = 41nC (Typ.), VGS = 10V
|
TY Semiconductor Co., L...
|
| FDS89161LZ |
Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
|
Fairchild Semiconductor
|
| KDS5670 |
10 A, 60 V. RDS(ON) = 0.014 @ VGS = 10 V High power and current handling capability
|
TY Semiconductor Co., Ltd
|
| 2SK2112 |
Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed
|
TY Semiconductor Co., Ltd
|
| KQB6N70 |
6.2A, 700 V. RDS(ON) = 1.5 VGS = 10 V Low gate charge (typical 130nC)
|
TY Semiconductor Co., Ltd
|
| 2SK3434 |
Super low on-state resistance: RDS(on)1 = 20m MAX. (VGS= 10 V, ID = 24A)
|
TY Semiconductor Co., L...
|
| 2SK3294 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| ST95P08 ST95P08B1TR ST95P08B3TR ST95P08B6TR ST95P0 |
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:3A; Resistance, Rds on:0.05R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:3.0A; Current, Idm pulse:12A; Marking, SMD:M5; Pins, No. RoHS Compliant: Yes
8 Kbit Serial SPI EEPROM with Positive Clock Strobe
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
