| PART |
Description |
Maker |
| PD46364092BF1-E40-EQ1 PD46364182BF1-E40-EQ1 PD4636 |
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44325084 UPD44325084F5-E50-EQ2 UPD44325094F5-E5 |
CABLE ASSEMBLY; LEAD-FREE SOLDER; SMA MALE TO SMA MALE; 50 OHM, RG142B/U COAX, DOUBLE SHIELDED
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM4个字爆发运作
36M-BIT QDRII SRAM 4-WORD BURST OPERATION 36M条位推出QDRII SRAM个字爆发运作
4M X 8 QDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, PLASTIC, FBGA-165
|
NEC Corp.
NEC, Corp.
|
| UPD44325092BF5-E33-FQ1 PD44325092B-15 |
4M X 9 QDR SRAM, 0.45 ns, PBGA165
36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| UPD44324184F5-E33-EQ2 UPD44324084F5-E33-EQ2 UPD443 |
36M-BIT DDRII SRAM 4-WORD BURST OPERAT 36M条位SRAM条DDRII词爆生产营运
|
NEC Corp.
NEC, Corp.
|
| CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
512K X 36 DDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1429JV18-250BZC CY7C1429JV18-250BZI CY7C1429JV |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| GS8182S18GD-167I |
18Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 18 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8662S36GE-250I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| BS62LV8005 BS62LV8005BC BS62LV8005BI BS62LV8005EC |
DDR-II, 25-Bit 1:1 or 14-Bit 1:2 Configurable Registered Buffer
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| CY7C1518JV18-250BZC CY7C1518JV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| AD7225 AD7225LN AD7225LR AD7225LP AD7225KN AD7225K |
ECONOLINE: REC2.2-S_DR/H1 - 2.2W DIP Package- 1kVDC Isolation- Regulated Output- UL94V-0 Package Material- Continuous Short Circiut Protection
LC2MOS Quad 8-Bit DAC with Separate Reference Inputs PARALLEL, 8 BITS INPUT LOADING, 5 us SETTLING TIME, 8-BIT DAC, PDIP24
LC2MOS Quad 8-Bit DAC with Separate Reference Inputs PARALLEL, 8 BITS INPUT LOADING, 8-BIT DAC, PQCC28
LC2MOS Quad 8-Bit DAC with Separate Reference Inputs PARALLEL, 8 BITS INPUT LOADING, 8-BIT DAC, PDSO24
|
Analog Devices, Inc.
|
