| PART |
Description |
Maker |
| 2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| PC895 PC875 PC865 |
From old datasheet system
High Sensitivity, Low Collector Dark Current, High Collector-emitter Voltage Type Photocoupler
|
SHARP[Sharp Electrionic Components]
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| 2SD1328 |
Low ON resistance Ron. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., L...
|
| DP030U |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| DN200 |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
| 2SD1815 |
Low collector-to-emitter saturation voltage. Excllent linearity of hFE.
|
TY Semiconductor Co., L...
|
| 2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
| 2SA1729 |
Adoption of FBET, MBIT Process. Low Collector-to-Emitter Saturation Voltage.
|
TY Semiconductor Co., Ltd
|
