| PART |
Description |
Maker |
| USB0405-LF-T7 USB0415-LF-T7 USB0403-LF-T7 USB0412- |
LOW CAPACITANCE TVS ARRAY 350 W, UNIDIRECTIONAL, SILICON, TVS DIODE
LOW CAPACITANCE TVS ARRAY 350 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
ProTek Devices
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| MAC08BT105 MAC08BT1G MAC08MT1G MAC08MT1 MAC08BT1 |
Silicon Bidirectional Thyristor(0.8A锛?00V涓????????纭???哥?)
Sensitive Gate Triacs Silicon Bidirectional Thyristors
Silicon Bidirectional Thyristor(0.8A00V三端双向可控硅晶闸管) 200 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-261AA
|
ONSEMI[ON Semiconductor]
|
| JANTX1N6145A JAN1N6112A JANTX1N6148A |
BIDIRECTIONAL TRANSIENT SUPPRESSORS 500 W, BIDIRECTIONAL, SILICON, TVS DIODE
|
TVS二极- 瞬态电压抑
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| PESD5V0U1BA PESD5V0U1BB PESD5V0U1BL PESD5V0U1BB115 |
Ultra low capacitance bidirectional ESD protection diodes; Package: SOD523 (SC-79); Container: Tape reel smd BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| MAC15 MAC15-008 MAC15A8G MAC1510 MAC15-10 MAC15-10 |
Silicon Bidirectional Thyristor(15A00V三端双向可控硅晶闸管) 400 V, 15 A, TRIAC, TO-220AB
Triacs Silicon Bidirectional Thyristors
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
|
| MAX6314US25D1-T MAX6314US25D2-T MAX6314US25D3-T MA |
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 4.39V. Reset timeout period(min) 1120ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 4.39V. Reset timeout period(min) 1ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 2.93V. Reset timeout period(min) 1120ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 2.63V. Reset timeout period(min) 1ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 2.63V. Reset timeout period(min) 1120ms.
68HC11/Bidirectional-Compatible 渭P Reset Circuit
68HC11/Bidirectional-Compatible P Reset Circuit
DIODE SWITCHING DUAL SERIES 75V 215mA-Io 150mW 3000ns-trr SOT-523 3K/REEL
68HC11/Bidirectional-Compatible レP Reset Circuit 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 2.63V. Reset timeout period(min) 20ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 3.08V. Reset timeout period(min) 140ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 3.50V. Reset timeout period(min) 140ms.
68H11/bidirectional-compatible microprocessor reset circuit. Reset threshold(nom) 4.39V. Reset timeout period(min) 140ms.
68HC11/Bidirectional-Compatible μP Reset Circuit
|
MAXIM - Dallas Semiconductor
http://
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
|
| CMO CMO-2-1000-G-LF-TR CMO-2-1000-J-LF-TR CMO-2-10 |
Commercial Grade Metal Oxide Resistor
RESISTOR, METAL OXIDE FILM, 0.5 W, 5 %, 350 ppm, 0.91 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, METAL OXIDE FILM, 0.5 W, 2 %, 350 ppm, 0.91 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, METAL OXIDE FILM, 0.5 W, 2 %, 350 ppm, 91 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, METAL OXIDE FILM, 0.5 W, 5 %, 350 ppm, 91 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, METAL OXIDE FILM, 0.5 W, 2 %, 350 ppm, 100 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, METAL OXIDE FILM, 0.5 W, 5 %, 350 ppm, 7500 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, METAL OXIDE FILM, 2 W, 5 %, 350 ppm, 3000 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, METAL OXIDE FILM, 2 W, 5 %, 350 ppm, 3600 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, METAL OXIDE FILM, 2 W, 5 %, 350 ppm, 3300 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
IRC - a TT electronics Company.
IRC Advanced Film
Vishay Intertechnology, Inc.
|
| 1N6053 1N6040 1N6059 1N6059A 1N6060 1N6060A 1N6058 |
From old datasheet system
MSTBA 2,5/18-G-LA
MSTBA 2,5/ 3-G-LA
SMSTB 2,5/20-G-5,08
BIDIRECTIONAL TRANSIENT ABSORPTION ZENER 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA
SMSTB 2,5/24-G-5,08
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| VS003E4 |
BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
SSPD Series Silicon Bidirectional Diode Noise clamp for signal line (For low voltage, USB2.0)
|
Sanyo Semicon Device
|
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