| PART |
Description |
Maker |
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| 2SD1196 |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
|
SANYO SEMICONDUCTOR CO LTD
|
| SFBUY57 BUY57 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package 15 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
TT electronics Semelab, Ltd.
Seme LAB
|
| TIP29CTSTU |
NPN Epitaxial Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 1 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| JANTXV2N7370 2N7370 JAN2N7370 JANTX2N7370 |
NPN Darlington Transistor
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
12 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254AA
|
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-LAWRENCE
|
| TIP102 |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| BD745C |
20 A, 100 V, NPN, Si, POWER TRANSISTOR
|
POWER INNOVATIONS LTD
|
| MJD31C MJD31C-13 |
NPN SURFACE MOUNT TRANSISTOR
3 A, 100 V, NPN, Si, POWER TRANSISTOR
|
Diodes Incorporated
|
| CENU05 CENU06 CENU57 CENU07 CEN-U07 CENU55 CENU56 |
SILICON COMPLEMENTARY POWER TRANSISTORS 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
http://
|
| TIP122-6226 |
8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Intersil, Corp.
|
|
