PART |
Description |
Maker |
HSU88 |
Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly
|
TY Semiconductor Co., Ltd
|
HZU2ALL |
1.8 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE ULTRA SMALL, URP, 2 PIN
|
Renesas Electronics, Corp.
|
HVR100 |
Small Resin Package (SRP) is suitable for surface mount design
|
TY Semiconductor Co., L...
|
LP3982-15J5F LP3982-18J5F LP3982-25J5F LP3982-28J5 |
300mA,Ultra-low noise, Small Package Ultra-Fast CMOS LDO Regulator
|
Lowpower Semiconductor inc http://
|
BC847PN |
Two internal isolated NPN/PNP Transistors in one package Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd
|
PMEG2005AEL PMEG2005AEL-1 PMEG2005AEL-2 |
0.5 A ultra low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 package 无铅超小型SOD882封装.5安超低正向压降MEGA肖特基势垒整流器 RECTIFIER DIODE
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
2N7002DW-7 |
115 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET ULTRA SMALL, PLASTIC PACKAGE-6
|
Diodes, Inc.
|
DF3A3.6FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 13.84 to 14.46; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
DF3A6.8FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 18.21 to 19.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
DF2S6.8FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用,但对静电放电(ESD)保护 Zener Diode; Application: General; Pd (mW): 200; Vz (V): 11.42 to 12.60; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
|
TLSU12507 TLSU125F TLSU126 TLSU126F TLSU125 |
Panel Circuit Indicator Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.31 to 5.92; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.31 to 5.55; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
|
Toshiba Semiconductor Toshiba Corporation
|