PART |
Description |
Maker |
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
BLF3G21-30 |
30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. UHF power LDMOS transistor BLF3G21-30<SOT467C (SOT467C)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G22LS-180RN |
Power LDMOS Transistor
|
Philips Semiconductors
|
BLF8G27LS-150GV BLF8G27LS-150V |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G22L-130N |
Power LDMOS transistor
|
NXP Semiconductors
|
BLP05H635XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLP05M7200-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLP05H6110XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|